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Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Ning Han1, Fengyun Wang, Jared J Hou

  • 1Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R.

Advanced Materials (Deerfield Beach, Fla.)
|June 21, 2013
PubMed

Keywords:
III-V nanowire field-effect transistorscontact printinginvertersmetal decorationn-channel metal-oxide-semiconductor (NMOS)threshold voltage modulation

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