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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
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CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide.

Stevan S Djordjevic1, Kuanping Shang, Binbin Guan

  • 1Department of of Electrical and Computer Engineering, University of California, Davis, California 95616, USA. sdjordjevic@ucdavis.edu

Optics Express
|June 22, 2013
PubMed
Summary
This summary is machine-generated.

We developed athermal nano-photonic silicon ring modulators using amorphous titanium dioxide overcladding. This innovative approach compensates for temperature-induced changes, enabling stable, high-performance optical modulation.

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon photonics offers high integration potential but suffers from temperature sensitivity.
  • Thermo-optic effects in silicon limit the performance of photonic devices like ring modulators.

Purpose of the Study:

  • To design and fabricate athermal nano-photonic silicon ring modulators.
  • To achieve stable device operation over a range of temperatures by compensating thermo-optic effects.

Main Methods:

  • Utilized amorphous titanium dioxide (a-TiO(2)) with a negative thermo-optic coefficient as an overcladding material.
  • Developed a CMOS-compatible fabrication process using low-temperature RF magnetron sputtering for a-TiO(2) deposition.
  • Fabricated silicon ring resonators with 275 nm wide rib waveguides clad with a-TiO(2).

Main Results:

  • Achieved near-complete athermalization in silicon ring resonators.
  • Demonstrated moderate optical losses in the a-TiO(2)-clad waveguides.
  • Micro-resonator modulators exhibited high extinction ratios and gigahertz bandwidth in small-signal testing.

Conclusions:

  • The proposed athermalization method effectively compensates for silicon's thermo-optic effects.
  • The developed fabrication process is compatible with CMOS technology.
  • Athermal silicon ring modulators show promise for high-speed, stable optical communication.