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Photoluminescence: Applications01:14

Photoluminescence: Applications

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The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry
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Published on: August 12, 2013

Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes.

Sun-Kyung Kim1, Hong-Gyu Park

  • 1Department of Applied Physics, Kyung Hee University, Gyeonggi-do 446-701, South Korea.

Optics Express
|June 22, 2013
PubMed
Summary

We developed a new dielectric Bragg mirror that enhances light extraction in Gallium Nitride (GaN) Light-Emitting Diodes (LEDs) by over 30% using coherent coupling. This novel approach promises to overcome efficiency limitations in semiconductor LEDs.

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Published on: January 28, 2019

Area of Science:

  • Optoelectronics
  • Materials Science
  • Semiconductor Physics

Background:

  • Gallium Nitride (GaN) Light-Emitting Diodes (LEDs) are crucial for efficient lighting.
  • Current LEDs face efficiency limitations due to light extraction challenges.

Purpose of the Study:

  • To propose and validate a novel dielectric Bragg mirror design for enhancing light extraction in GaN LEDs.
  • To investigate the role of coherent coupling between multiple quantum wells (MQWs) and the mirror structure.

Main Methods:

  • Full vectorial electromagnetic simulation was employed to model the proposed Bragg/metal mirror.
  • The structure involved dielectric (SiO(2)/TiO(2)) stacks and a silver layer, coupled with MQWs.
  • Parametric studies were conducted on gap distance and a 2D periodic pattern in the GaN layer.

Main Results:

  • The proposed Bragg mirror achieved >30% enhancement in light extraction compared to a single silver mirror.
  • Enhanced extraction is attributed to a vertically oriented radiation pattern and reduced plasmonic metal loss.
  • Optimal light extraction was observed with a specific lattice constant (~800 nm) for the 2D periodic pattern.

Conclusions:

  • Coherent coupling with a designed dielectric Bragg/metal mirror significantly boosts light extraction efficiency in GaN LEDs.
  • Modulating mirror structure parameters allows control over constructive interference for optimized light emission.
  • This approach offers a promising pathway to overcome efficiency limits in semiconductor LED devices.