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Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

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Radical diffusion limits to photoinhibited superresolution lithography.

Darren L Forman¹, Michael C Cole, Robert R McLeod

¹Department of Electrical Engineering, University of Colorado at Boulder, Boulder, CO 80309, USA.

Physical Chemistry Chemical Physics : PCCP

|June 29, 2013

Summary

This summary is machine-generated.

Photoinhibited superresolution (PInSR) lithography struggles with patterning due to rapid photoinhibitor diffusion. Modifications are proposed to slow diffusion and improve polymer confinement for high-throughput, subwavelength patterning.

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Area of Science:

Materials Science
Nanotechnology
Photochemistry

Background:

Photoinhibited superresolution (PInSR) lithography enables high-throughput, far-field patterning at deep subwavelength scales.
The technique relies on confining active species within illuminated areas for effective polymerization.

Purpose of the Study:

To investigate the confinement dynamics of photoinhibitor in PInSR materials.
To determine if published PInSR materials meet the required confinement conditions for structured inhibition.

Main Methods:

Utilized spatial and temporal control of focused beams.
Employed fluorescence recovery after photobleaching (FRAP) to probe photoinhibition dynamics.

Main Results:

Observed fast out-diffusion of unreacted photoinhibitor from the optical spot during polymerization.
Found that this diffusion leads to uniform inhibition, not the desired structured inhibition.
Concluded that superresolved polymer confinement with PInSR has not yet been demonstrated with structured inhibition.

Conclusions:

Fast photoinhibitor out-diffusion is a critical limitation in current PInSR materials.
Proposed material and exposure modifications to reduce inhibitor diffusion and enhance gelation.
Aimed at achieving true superresolved polymer confinement via structured inhibition in PInSR lithography.