Self-induced gate dielectric for graphene field-effect transistor
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Updated: May 10, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Kaliannan Thiyagarajan1, Balasubramaniam Saravanakumar, Rajneesh Mohan
1Nanomaterials and System Lab, Department of Mechatronics Engineering, Jeju National University, Jeju 690-756, Republic of Korea.
Abstract:
We report the electronic characteristics of an avant-garde graphene-field-effect transistor (G-FETs) based on ZnO microwire as top-gate electrode with self-induced dielectric layer. Surface-adsorbed oxygen is wrapped up the ZnO microwire to provide high electrostatic gate-channel capacitance. This nonconventional device structure yields an on-current of 175 μA, on/off current ratio of 55, and a device mobility exceeding 1630 cm(2)/(V s) for holes and 1240 cm(2)/(V s) for electrons at room temperature. Self-induced gate dielectric process prevents G-FETs from impurity doping and defect formation in graphene lattice and facilitates the lithographic process. Performance degradation of G-FETs can be overcome by this avant-garde device structure.
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