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Temporal ringdown of silicon-on-insulator racetrack resonators
T J Karle1, F Raineri, V Roppo
1School of Physics, University of Melbourne, Melbourne 3010 Australia.
Optics Letters
|July 2, 2013
Summary
Silicon-on-insulator racetrack resonators were measured using short pulses. Results show excellent agreement between time-domain measurements and analytical models for cavity round trip time and quality factor.
Area of Science:
- Optoelectronics
- Nanophotonics
- Integrated photonics
Background:
- Silicon-on-insulator (SOI) wire racetrack resonators are key components in integrated photonic circuits.
- Accurate characterization of resonator properties like round trip time and quality factor is crucial for device performance.
- Traditional continuous wave (CW) spectroscopy can be time-consuming and may not capture dynamic behaviors.
Purpose of the Study:
- To perform time-domain ring-down measurements on SOI wire racetrack resonators.
- To validate the accuracy of these temporal measurements against CW spectroscopy and theoretical models.
- To assess the potential of this technique for characterizing photonic devices.
Main Methods:
- Utilized 150 fs input pulses for excitation.
- Employed a parametric process in a nonlinear crystal for gating and amplification of weak output pulses.
- Measured cavity round trip time and quality factor using the ring-down technique.
Main Results:
- Achieved excellent agreement between ring-down temporal measurements and CW spectroscopic data.
- Demonstrated strong concordance between experimental results and an analytic model based on numerical solutions for vectorial waveguide modes.
- Successfully characterized the temporal dynamics of SOI racetrack resonators.
Conclusions:
- Ring-down temporal measurements provide a viable and accurate method for characterizing SOI racetrack resonators.
- The technique offers an alternative or complementary approach to CW spectroscopy for device analysis.
- Validated the performance of SOI wire racetrack resonators and the employed analytical model.

