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Updated: May 10, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8
Vincent Dubost1, Tristan Cren, Cristian Vaju
1Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS UMR 7588, Paris, France.
Abstract:
We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (STM/STS). Moreover, we show that local electronic transitions can be controlled at the nanoscale at room temperature using the electric field of the STM tip. This opens the way for possible applications in resistive random access memories (RRAM) devices.
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