Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
System of Memory01:23

System of Memory

Memory is categorized into three major systems: sensory memory, short-term memory (STM), and long-term memory (LTM). These systems differ in their capacity and the duration for which they can hold information. Sensory memory captures raw sensory input from the environment, holding it for just a few seconds or less. For example, on hearing a brief, loud sound, like a car horn honking, the sound seems to linger in the mind for a moment even after it stops. This is an instance of sensory memory...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Types of Reversible Electrodes01:24

Types of Reversible Electrodes

For electrode reversibility to be maintained, all the reactants and products involved in the half-reaction must be present at the electrode. There are several types of reversible electrodes (half-cells).In metal-metal-ion electrodes, a metal balances electrochemically with a solution of its own ions. Examples are Cu2+|Cu and Zn2+|Zn. Metals that react with the solvent, like group 1 and most group 2 metals, which react with water, and zinc, which reacts with aqueous acidic solutions, cannot be...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Electroluminescent perovskite QD-based neural networks for energy-efficient and accelerate multitasking learning.

Science advances·2026
Same author

A Vertical Molecular Synaptic Transistor with Redox-Induced Analog States.

ACS nano·2025
Same author

Nonvolatile Transition of Molecular Orbital Gating for Reconfigurable Molecular Ambipolar Transistor Switch.

ACS nano·2025
Same author

On-chip single-crystal plasmonic optoelectronics for efficient hot carrier collection and photovoltage detection.

Light, science & applications·2025
Same author

The Next 25 Years of Nanoscience and Nanotechnology: A <i>Nano Letters</i> Roadmap.

Nano letters·2025
Same author

Bulk-Rashba Effect with Suppressed Spin Relaxation in a Polar Phase of Bi<sub>1-</sub> <sub>x</sub>In<sub>1+</sub> <sub>x</sub>O<sub>3</sub>.

Advanced materials (Deerfield Beach, Fla.)·2025

Related Experiment Video

Updated: May 9, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

Gunuk Wang1, Adam C Lauchner, Jian Lin

  • 1Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA; Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA.

Advanced Materials (Deerfield Beach, Fla.)
|July 10, 2013
PubMed
Summary
This summary is machine-generated.

Researchers developed a 1-kilobit crossbar device using silicon oxide (SiOx) resistive memory and integrated diodes. This one diode-one resistor system shows potential for future non-volatile memory technologies.

Keywords:
non-volatile memoryone diode-one resistorsilicon oxides

More Related Videos

Micro-drive Array for Chronic in vivo Recording: Drive Fabrication
14:03

Micro-drive Array for Chronic in vivo Recording: Drive Fabrication

Published on: April 20, 2009

Micro-drive Array for Chronic in vivo Recording: Tetrode Assembly
14:19

Micro-drive Array for Chronic in vivo Recording: Tetrode Assembly

Published on: April 22, 2009

Related Experiment Videos

Last Updated: May 9, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Micro-drive Array for Chronic in vivo Recording: Drive Fabrication
14:03

Micro-drive Array for Chronic in vivo Recording: Drive Fabrication

Published on: April 20, 2009

Micro-drive Array for Chronic in vivo Recording: Tetrode Assembly
14:19

Micro-drive Array for Chronic in vivo Recording: Tetrode Assembly

Published on: April 22, 2009

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Engineering

Background:

  • Non-volatile memory (NVM) is crucial for modern electronics, demanding higher density and performance.
  • Resistive random-access memory (RRAM) based on silicon oxide (SiOx) is a promising NVM technology due to its scalability and low power consumption.

Purpose of the Study:

  • To fabricate and characterize a 1-kilobit crossbar array utilizing SiOx resistive memory devices with integrated diodes.
  • To evaluate the potential of this integrated device system for next-generation non-volatile memory applications.

Main Methods:

  • Fabrication of a 1-kilobit crossbar array architecture.
  • Integration of diodes with SiOx-based resistive memory elements.
  • Characterization of the electrical performance and reliability of the one diode-one resistor (1D1R) devices.

Main Results:

  • Successful fabrication of a functional 1-kilobit crossbar device array.
  • Demonstration of the 1D1R device structure using SiOx resistive switching.
  • The integrated SiOx memory devices exhibit characteristics suitable for NVM applications.

Conclusions:

  • The developed 1-kilobit SiOx crossbar device with integrated diodes represents a significant step towards practical RRAM.
  • The 1D1R architecture shows promise for meeting the stringent requirements of future non-volatile memory technologies.
  • Further research can optimize device performance and explore large-scale integration.