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Updated: May 9, 2026
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Fabrication and luminescence of monolayered boron nitride quantum dots
Liangxu Lin1, Yaoxian Xu, Shaowei Zhang
1Department of Materials Science and Engineering, University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield S1 3JD, UK.
Small (Weinheim an Der Bergstrasse, Germany)
|July 11, 2013
Abstract:
Monolayered boron nitride (BN) quantum dots (QDs; lateral size ≈10 nm) are fabricated using a novel method. Unlike monolayered BN sheets, these BN QDs exhibit blue-green luminescence due to defects formed during preparation. This optical behavior adds significant functionality to a material that is already receiving much attention. It is further shown that the QDs are nontoxic to biological cells and well suited to bio-imaging.
