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Updated: May 9, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Matching p-i-n-junctions and optical modes enables fast and ultra-small silicon modulators
Stefan Meister1, Hanjo Rhee, Aws Al-Saadi
1Technische Universität Berlin, Institut für Optik und Atomare Physik, Strasse des 17. Juni 135, 10623 Berlin, Germany. smeister@physik.tu-berlin.de
Abstract:
In this article a new method is presented that allows for low loss implementation of fast carrier transport structures in diffraction limited photonic crystal resonators. We utilize a 'node-matched doping' process in which precise silicon doping results in comb-like shaped, highly-doped diode areas that are matched to the spatial field distribution of the optical modes of a Fabry-Pérot resonator. While the doping is only applied to areas with low optical field strength, the intrinsic diode region overlaps with an optical field maximum. The presented node-matched diode-modulators, combining small size, high-speed, thermal stability and energy-efficient switching could become the centerpiece for monolithically integrated transceivers.
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