Related Experiment Video
Updated: May 9, 2026
11:45
Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
Published on: August 17, 2017
Demonstration of a dressed-state phase gate for trapped ions
T R Tan1, J P Gaebler, R Bowler
1National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305, USA. tingrei.tan@nist.gov
Physical Review Letters
|July 16, 2013
Summary
We demonstrate a robust trapped-ion entangling gate for creating entangled states. This method offers high fidelity and simplifies experimental implementation for quantum computing applications.
Area of Science:
- Quantum Information Science
- Atomic Physics
- Quantum Computing
Background:
- Trapped-ion systems are leading platforms for quantum computation.
- Developing high-fidelity entangling gates is crucial for scalable quantum computers.
- Existing gates face challenges with fidelity, robustness, and experimental complexity.
Purpose of the Study:
- To experimentally demonstrate the trapped-ion entangling-gate scheme proposed by Bermudez et al.
- To achieve deterministic creation of entangled states with high fidelity.
- To assess the robustness and experimental feasibility of the proposed gate.
Main Methods:
- Utilizing simultaneous excitation of a strong carrier and a single-sideband transition in trapped ions.
- Employing magnetic field-insensitive states for enhanced stability.
- Implementing dynamical decoupling to mitigate qubit dephasing errors.
Main Results:
- Achieved a Bell state fidelity of 0.974(4).
- Demonstrated robustness against thermal excitations.
- Identified and analyzed the primary sources of error in the gate operation.
Conclusions:
- The demonstrated gate scheme is a viable method for creating entangled states in trapped-ion systems.
- The approach offers advantages in robustness and experimental simplicity compared to other methods.
- Further error analysis can guide improvements for future quantum information processing.
