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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic

Jeongmin Kang1, Taeho Moon, Youngin Jeon

  • 1School of Electrical Engineering, Korea University, Seoul 136-713, Korea.

Journal of Nanoscience and Nanotechnology
|July 18, 2013
PubMed
Summary

Researchers developed flexible logic circuits using zinc oxide (ZnO) nanowires in multilayered transistors. These novel circuits demonstrate high performance and feasibility for three-dimensional electronic applications.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Flexible electronics require novel materials for transistor fabrication.
  • Vertical integration of components is key for 3D circuit design.

Purpose of the Study:

  • To construct ZnO-nanowire-based logic circuits using vertically integrated multilayered field-effect transistors (FETs).
  • To evaluate the performance of these flexible circuits for 3D applications.

Main Methods:

  • Synthesized ZnO nanowires (~100 nm diameter) via thermal chemical vapor deposition for FET channels.
  • Fabricated multilayered FETs sequentially on plastic substrates with C-PVPs for isolation.
  • Connected stacked FETs in series for logic circuit construction.

Main Results:

  • Achieved high I(ON)/I(OFF) ratio (> 10^6) for ZnO-based FETs with n-type depletion mode characteristics.
  • Demonstrated NOT and NAND logic gates with large logic-swing values (-93%).
  • Successfully integrated multilayered FETs for vertically stacked flexible logic circuits.

Conclusions:

  • Vertical integration of ZnO-nanowire FETs on plastic substrates enables 3D flexible logic circuits.
  • The developed circuits exhibit promising performance metrics for future electronic devices.
  • This work highlights the potential of ZnO nanowires in advanced flexible electronics.