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Related Experiment Video

Updated: May 9, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Reduction process of dislocation and standby leakage current for embedded flash memory using nano-scale integration.

Jong-Won Sun1, Ji Hwan Park, Taek-Seung Yang

  • 1School of Integrative Engineering, Chung-Ang University, Seoul 156-756, Korea.

Journal of Nanoscience and Nanotechnology
|July 19, 2013
PubMed
Summary

This study introduces a dislocation-free process for embedded flash memory, utilizing specific oxidation and implantation techniques to significantly reduce defects and standby leakage current.

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Area of Science:

  • Semiconductor Device Physics
  • Materials Science
  • Electrical Engineering

Background:

  • Dislocations in semiconductor devices can degrade performance and increase leakage current.
  • Embedded flash memory requires robust fabrication processes to ensure reliability and efficiency.

Purpose of the Study:

  • To propose and demonstrate a dislocation-free fabrication process for embedded flash memory.
  • To investigate methods for reducing dislocations during device manufacturing.
  • To minimize standby leakage current in flash memory devices.

Main Methods:

  • Utilized densification, sacrificial oxidation, gate oxidation, and source/drain implantation.
  • Employed low-energy n-type ion implantation for source and drain regions.
  • Implemented dry oxidation with oxygen (no hydrogen) and rapid thermal oxidation (RTP) for sacrificial oxide formation without post-gap-fill densification.

Main Results:

  • Successfully reduced dislocation density through the proposed process.
  • Observed a decrease in dislocation with low-energy n-type ion implantation.
  • Achieved significant reduction in standby leakage current.

Conclusions:

  • The developed dislocation-free process effectively minimizes defects in embedded flash memory.
  • Sacrificial oxidation and optimized implantation are key to reducing dislocations.
  • The process leads to dramatically reduced standby leakage current, enhancing device performance.