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Updated: May 9, 2026

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
Published on: March 6, 2017
Ultrafast charge recombination in a photoexcited Mott-Hubbard insulator
Zala Lenarčič1, Peter Prelovšek
1J. Stefan Institute, SI-1000 Ljubljana, Slovenia.
Abstract:
We present a calculation of the recombination rate of the excited holon-doublon pairs based on the two-dimensional model relevant for undoped cuprates, which shows that fast processes, observed in pump-probe experiments on Mott-Hubbard insulators in the picosecond range, can be explained even quantitatively with the multimagnon emission. The precondition is the existence of the Mott-Hubbard bound exciton of the s-type. We find that its decay is exponentially dependent on the Mott-Hubbard gap and on the magnon energy, with a small prefactor, which can be traced back to strong correlations and consequently large exciton-magnon coupling.
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