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Published on: April 12, 2018
Giant thermovoltage in single InAs nanowire field-effect transistors
Stefano Roddaro1, Daniele Ercolani, Mian Akif Safeen
1NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Pisa, Italy. s.roddaro@sns.it
Abstract:
Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias ΔT > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity σ between room temperature and 100 K. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.
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