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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture

Xinge Yu1, Nanjia Zhou, Jeremy Smith

  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, PR China.

ACS Applied Materials & Interfaces
|July 24, 2013
PubMed

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