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Updated: May 9, 2026

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Published on: November 24, 2016
Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate
Hock Jin Quah1, Kuan Yew Cheong
1Electronic Materials Research Group, School of Materials & Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia.
Abstract:
An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms contributing to leakage current of the investigated sample were discussed and correlated with metal-oxide-semiconductor characteristics of this sample.

