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XAFS in dilute magnetic semiconductors
Zhihu Sun1, Wensheng Yan, Tao Yao
1National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China. sqwei@ustc.edu.cn.
Dalton Transactions (Cambridge, England : 2003)
|July 26, 2013
Summary
X-Ray absorption fine structure (XAFS) spectroscopy is a powerful tool for characterizing dilute magnetic semiconductors (DMS). This review details XAFS principles and applications for analyzing atomic and electronic structures in DMS materials.
Area of Science:
- Condensed matter physics
- Materials science
- Spectroscopy
Background:
- X-Ray absorption fine structure (XAFS) spectroscopy has advanced significantly over four decades.
- XAFS is a powerful technique for characterizing local environments in condensed matter.
Purpose of the Study:
- To review the applications of XAFS in studying the atomic and electronic structure of dilute magnetic semiconductors (DMS).
- To provide an overview of XAFS principles, including theory, data analysis, and experimental aspects.
Main Methods:
- Detailed introduction to XAFS theory, data analysis, and experimental procedures.
- Review of selected examples showcasing XAFS applications in DMS systems.
Main Results:
- XAFS effectively determines dopant site occupation and distribution in DMS.
- XAFS detects metal clusters, secondary phases, defect types, and dopant valence in DMS.
- Demonstrates the capability of XAFS in characterizing complex DMS materials.
Conclusions:
- XAFS is a versatile and powerful technique for the characterization of dilute magnetic semiconductors.
- This review serves as a valuable resource for researchers new to DMS and the broader scientific community involved in DMS research.
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