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Related Experiment Video

Updated: May 9, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Bandgap opening by patterning graphene.

Marc Dvorak1, William Oswald, Zhigang Wu

  • 1Department of Physics, Colorado School of Mines, Golden, CO 80401, USA.

Scientific Reports
|July 27, 2013
PubMed
Summary

Periodic patterning of graphene opens a bandgap due to geometric symmetry, not just electronic effects. This finding provides a rule for creating semiconducting graphene and understanding related carbon nanotube properties.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene's zero bandgap limits its use in electronics and optoelectronics.
  • Periodic patterning is a promising strategy to engineer graphene's electronic properties.

Purpose of the Study:

  • To elucidate the precise role of periodic modulations in patterned graphene's electronic structure.
  • To derive an analytic rule for bandgap opening in patterned graphene.

Main Methods:

  • Tight-binding modeling
  • First-principles electronic structure calculations

Main Results:

  • The bandgap in patterned graphene originates from geometric symmetry.
  • An analytic rule for bandgap opening in patterned graphene was derived.

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Last Updated: May 9, 2026

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Published on: July 24, 2015

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  • If patterned graphene becomes a semiconductor, its corresponding carbon nanotubes are semimetals.

    • Conclusions:

    • Geometric symmetry is the key factor for bandgap formation in patterned graphene.
    • The derived rule offers insights into designing semiconducting graphene materials.
    • Understanding patterned graphene's electronic behavior has implications for carbon nanotube research.