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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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MOSFET01:16

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Published on: May 13, 2020

Sericin for resistance switching device with multilevel nonvolatile memory.

Hong Wang1, Fanben Meng, Yurong Cai

  • 1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Website: http://www.ntu.edu.sg/home/chenxd/

Advanced Materials (Deerfield Beach, Fla.)
|July 30, 2013
PubMed
Summary

Natural sericin protein films exhibit excellent resistance switching for nonvolatile memory. This high-performance biomaterial enables multilevel memory with a high OFF/ON ratio, paving the way for eco-friendly electronic devices.

Keywords:
electronic devicemultilevel memoryproteinresistance switchingsericin

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Area of Science:

  • Materials Science
  • Biomaterials Engineering
  • Electronics

Background:

  • Nonvolatile memory is crucial for modern electronics.
  • Developing sustainable and high-performance memory materials is an ongoing challenge.
  • Biomaterials offer potential for novel electronic applications.

Purpose of the Study:

  • To investigate the resistance switching characteristics of natural sericin protein films.
  • To demonstrate the feasibility of sericin-based materials for nonvolatile memory applications.
  • To evaluate the performance metrics of sericin-based memory devices.

Main Methods:

  • Fabrication of thin films using natural sericin protein.
  • Characterization of electrical resistance switching properties.
  • Testing for nonvolatile memory performance, including OFF/ON ratio and multilevel storage capability.

Main Results:

  • Demonstrated resistance switching characteristics in natural sericin protein films for the first time.
  • Achieved excellent memory characteristics with a resistance OFF/ON ratio exceeding 10^6.
  • Successfully implemented multilevel memory functionality using sericin-based devices.

Conclusions:

  • Natural sericin protein is a viable and high-performance material for nonvolatile memory applications.
  • Sericin-based memory devices offer an environmentally friendly alternative for future electronic development.
  • The demonstrated capabilities suggest significant potential for biomaterial-based electronics.