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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Related Experiment Video

Updated: May 9, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Vertical graphene spin valve with Ohmic contacts.

Jie Meng1, Jing-Jing Chen, Yuan Yan

  • 1State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, P.R. China. liaozm@pku.edu.cn.

Nanoscale
|August 3, 2013
PubMed
Summary

Spin valve signals were observed in cobalt/graphene/cobalt structures across a wide temperature range. These devices exhibit Ohmic properties, suggesting potential for high-density non-volatile memory applications.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Spin valves are crucial for magnetic sensors and memory devices.
  • Graphene's unique electronic properties make it a promising material for spintronic applications.

Purpose of the Study:

  • To investigate spin valve signals in cobalt/graphene/cobalt sandwich structures.
  • To evaluate the performance of graphene-based spin valves at various temperatures.

Main Methods:

  • Fabrication of Co/graphene/Co sandwich structures using monolayer and bilayer graphene.
  • Electrical characterization of the devices, including current-voltage (I-V) measurements.
  • Temperature-dependent measurements from 1.5 K to 300 K.

Main Results:

  • Clear spin valve signals were observed in all fabricated devices.
  • Linear current-voltage curves indicated dominant Ohmic behavior, not tunneling.
  • Consistent performance was observed across a wide temperature range (1.5 K to 300 K).

Conclusions:

  • Vertical graphene spin valves exhibit robust performance.
  • The Ohmic characteristics suggest suitability for specific memory applications.
  • These devices show potential for developing high-density non-volatile memories.