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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Ballistic collective group delay and its Goos-Hänchen component in graphene
1Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China. kwungyusung@gmail.com
Abstract:
We theoretically construct an experimental observable for the ballistic collective group delay (CGD) of all the particles on the Fermi surface in graphene. First, we reveal that lateral Goos-Hänchen (GH) shifts along barrier interfaces contribute an inherent component in the individual group delay (IGD). Then, by linking the complete IGD to spin precession through a dwell time, we suggest that the CGD and its GH component can be electrostatically measured by the conductance difference in a spin precession experiment under weak magnetic fields. Such an approach is feasible for almost any Fermi energy. We also indicate that it is a generally nonzero self-interference delay that relates the IGD to the dwell time in graphene.
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