Related Experiment Video

Updated: May 9, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

The memristive properties of a single VO2 nanowire with switching controlled by self-heating

Sung-Hwan Bae1, Sangmin Lee, Hyun Koo

  • 1Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul, 151-742, Korea.

Advanced Materials (Deerfield Beach, Fla.)
|August 6, 2013
PubMed

Keywords:
memristormetal-to-insulator transitionnon-volatile memory deviceresistive switching devicevanadium dioxide nanowire

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