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Published on: November 1, 2013
Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array
James R Riley1, Sonal Padalkar, Qiming Li
1Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.
Abstract:
Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.
