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Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages
Published on: April 13, 2016
Microstructural study on Kirkendall void formation in Sn-containing/Cu solder joints during solid-state aging.
Zhi-Quan Liu1, Pan-Ju Shang, Feifei Tan
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, Liaoning 110016, China. zqliu@imr.ac.cn
Kirkendall voids form at solder/copper interfaces, impacting microelectronic packaging reliability. Their location and formation mechanism differ based on solder composition, influencing voiding in the reaction zone.
Area of Science:
- Materials Science
- Reliability Engineering
- Microelectronic Packaging
Background:
- Kirkendall void formation at the solder/metallization interface is a critical reliability issue for copper (Cu) conductors and under-bump metallization.
- The precise mechanisms driving void formation vary and require further elucidation for specific cases.
Purpose of the Study:
- To investigate the microstructural evolution and voiding process in two distinct solder/Cu diffusion couples: eutectic SnIn/Cu and SnBi/Cu.
- To understand how different intermetallic compound (IMC) layer morphologies influence void formation.
Main Methods:
- Utilized scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for detailed microstructural analysis.
- Examined samples after soldering and subsequent solid-state aging to observe voiding progression.
Main Results:
- In eutectic SnIn/Cu joints, Kirkendall voids formed within the Cu2(In,Sn) intermetallic phase.
- In eutectic SnBi/Cu joints, voids appeared at the Cu3Sn/Cu interface or within the Cu3Sn intermetallic layer.
- Observed variations in void location and morphology attributed to differences in intermetallic layer structure and impurity effects.
Conclusions:
- The morphological characteristics of intermetallic compound layers significantly impact the diffusion rates of reactive species.
- These diffusion rate differences, influenced by both composition and morphology, directly lead to void formation in the reaction zone.
- Understanding these distinct voiding mechanisms is crucial for enhancing the reliability of microelectronic packaging.
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