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Updated: May 9, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

High-performance nonvolatile Al/AlO(x)/CdTe:Sb nanowire memory device.

Chao Xie¹, Biao Nie, Long Zhu

¹School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.

|August 9, 2013

Summary

This summary is machine-generated.

A new nonvolatile memory device using an aluminum/aluminum oxide/antimony-doped cadmium telluride nanowire heterojunction was developed. This room-temperature processed device exhibits high performance and flexibility, paving the way for advanced electronic memory applications.

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Last Updated: May 9, 2026

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Published on: May 13, 2020

Area of Science:

Materials Science
Nanotechnology
Electrical Engineering

Background:

Nonvolatile memory devices are crucial for data storage.
Developing high-performance, flexible memory solutions remains a key challenge.
Nanowire heterojunctions offer promising properties for advanced electronic devices.

Purpose of the Study:

To demonstrate a room-temperature processed nonvolatile memory device.
To investigate the memory characteristics of an Al/AlO(x)/CdTe:Sb nanowire heterojunction.
To explore the potential for flexible memory nano-devices.

Main Methods:

Fabrication of an Al/AlO(x)/CdTe:Sb nanowire heterojunction.
Electrical characterization to analyze hysteresis, switching voltages, and retention time.
X-ray Photoelectron Spectroscopy (XPS) to determine the role of the AlO(x) film.

Main Results:

The device exhibited echelon hysteresis with distinct high-resistance (HRS) and low-resistance (LRS) states.
Achieved a high conductance ratio of 10⁶ and a retention time of 3 × 10⁴ s.
Demonstrated comparable switching performance in flexible devices on PET substrates under bending conditions.

Conclusions:

The memory behavior is attributed to the ultra-thin AlO(x) film within the heterojunction.
Room-temperature processing and flexible fabrication are feasible.
This Al/AlO(x)/CdTe:Sb NW heterojunction presents opportunities for novel memory device configurations.