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Related Concept Videos

Resting Membrane Potential01:24

Resting Membrane Potential

The relative difference in electrical charge, or voltage, between the inside and the outside of a cell membrane, is called the membrane potential. It is generated by differences in permeability of the membrane to various ions and the concentrations of these ions across the membrane.
The Inside of a Neuron is More Negative
The membrane potential of a cell can be measured by inserting a microelectrode into a cell and comparing the charge to a reference electrode in the extracellular fluid. The...
The Resting Membrane Potential01:21

The Resting Membrane Potential

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Long-term Behavioral Tracking of Freely Swimming Weakly Electric Fish
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Low voltage EELS-how low?

M Stöger-Pollach1

  • 1University Service Center for Transmission Electron Microscopy, Technische Universität Wien, Wiedner Hauptstraße 8-10, A-1040 Wien, Austria.

Ultramicroscopy
|August 10, 2013
PubMed
Summary

Low beam energies in scanning transmission electron microscopy (S/TEM) offer advantages. This study details optimal low-voltage electron energy loss spectrometry (EELS) setups for material analysis.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electron Microscopy

Background:

  • Higher beam energies in electron microscopy can damage samples and limit resolution.
  • Low beam energies offer potential benefits for analyzing delicate materials and nanoscale structures.

Purpose of the Study:

  • To evaluate the performance of standard (scanning) transmission electron microscopes (S/TEM) at reduced beam energies.
  • To explore the advantages of low beam energies for determining optical properties of silicon and buried quantum structures.
  • To identify critical parameters for successful low-voltage electron energy loss spectrometry (EELS) experiments.

Main Methods:

  • Utilized a conventional S/TEM equipped with an energy loss spectrometer.
  • Operated the S/TEM at reduced beam energies (13 keV and 60 keV).
Keywords:
DelocalizationOptical propertiesValence EELS

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  • Focused on optimizing the alignment and experimental parameters for low-voltage EELS.

    • Main Results:

    • Demonstrated the feasibility and advantages of using low beam energies in S/TEM for material characterization.
    • Showcased the application of low-voltage EELS for probing the optical properties of silicon and quantum structures.
    • Identified key experimental parameters crucial for effective low-voltage EELS.

    Conclusions:

    • Low beam energies are advantageous for S/TEM, particularly for optical property determination.
    • Optimized low-voltage EELS provides valuable insights into material electronic structure.
    • Proper experimental setup is essential for maximizing the benefits of low-voltage EELS.