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Updated: May 8, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Tunable superlattice in graphene to control the number of Dirac points
Sudipta Dubey1, Vibhor Singh, Ajay K Bhat
1Department of Condensed Matter Physics and Materials Science and ‡Department of Theoretical Physics, Tata Institute of Fundamental Research , Homi Bhabha Road, Mumbai 400005, India.
Abstract:
Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.

