Related Experiment Video
Updated: May 8, 2026
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Composite structure of SiO2@AgNPs@p-SiNWs for enhanced broadband optical antireflection
1Department of Physics & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
Abstract:
The composite structure of SiO(2)@AgNPs@p-SiNWs based on silicon nanowires (SiNWs) produced by metal-assisted chemical etching (MaCE) method has been designed to realize the significant reflection suppression over a broad wavelength range (300 - 2500 nm). Especially, the reflectivity of the structure even below 0.3% at a wide range of 620 - 1950 nm can be achieved. It also has been demonstrated that SiO(2) capers play a dominant role in the significant reflection suppression of the composite structure.
