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Published on: January 3, 2016
Scattering and transport properties of tight-binding random networks
A J Martínez-Mendoza1, A Alcazar-López, J A Méndez-Bermúdez
1Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apartado Postal J-48, Puebla 72570, Mexico.
This study numerically investigates electronic transport in random networks, revealing a smooth transition from insulating to metallic behavior with increasing connectivity. Key transport properties were found to be invariant under a specific disorder parameter.
Area of Science:
- Condensed Matter Physics
- Statistical Mechanics
- Computational Physics
Background:
- Understanding electronic transport in disordered systems is crucial for materials science.
- Random networks provide a simplified model for complex electronic structures.
- Scattering theory is a fundamental tool for analyzing transport phenomena.
Purpose of the Study:
- To numerically investigate the statistical properties of electronic transport in tight-binding random networks.
- To analyze the crossover behavior from insulating to metallic states.
- To identify universal relationships governing transport properties and disorder.
Main Methods:
- Numerical simulations of tight-binding random networks.
- Application of scattering approach to electronic transport.
- Analysis of transport quantities including scattering matrix elements, conductance, and shot noise.
Main Results:
- Observed a smooth crossover from insulating to metallic behavior by varying average connectivity (α).
- Demonstrated invariance of transport properties for a fixed disorder parameter (ξ = αN).
- Proposed a universal relation between scattering, conductance, noise, and the disorder parameter.
Conclusions:
- The connectivity of random networks significantly influences electronic transport behavior.
- The disorder parameter ξ offers a unifying perspective on transport properties.
- The findings provide insights into the fundamental mechanisms of electron transport in disordered materials.
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