Related Experiment Video
Updated: May 8, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Gaussian quadrature and lattice discretization of the Fermi-Dirac distribution for graphene
D Oettinger1, M Mendoza, H J Herrmann
1ETH Zürich, Department of Physics, CH-8093 Zürich, Switzerland.
Abstract:
We construct a lattice kinetic scheme to study electronic flow in graphene. For this purpose, we first derive a basis of orthogonal polynomials, using as the weight function the ultrarelativistic Fermi-Dirac distribution at rest. Later, we use these polynomials to expand the respective distribution in a moving frame, for both cases, undoped and doped graphene. In order to discretize the Boltzmann equation and make feasible the numerical implementation, we reduce the number of discrete points in momentum space to 18 by applying a Gaussian quadrature, finding that the family of representative wave (2+1)-vectors, which satisfies the quadrature, reconstructs a honeycomb lattice. The procedure and discrete model are validated by solving the Riemann problem, finding excellent agreement with other numerical models. In addition, we have extended the Riemann problem to the case of different dopings, finding that by increasing the chemical potential the electronic fluid behaves as if it increases its effective viscosity.
More Related Videos
11:24Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Related Concept Videos
Gauss's Law
Gauss's Law: Problem-Solving
Gauss's Law: Planar Symmetry
Gauss's Law in Dielectrics
Debye–Huckel–Onsager Conductance Equation
Gauss's Law: Cylindrical Symmetry