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Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Related Experiment Video

Updated: May 8, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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Published on: December 5, 2015

Low-frequency electronic noise in single-layer MoS2 transistors.

Vinod K Sangwan¹, Heather N Arnold, Deep Jariwala

¹Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.

|August 16, 2013

Summary

This summary is machine-generated.

Low-frequency 1/f noise in molybdenum disulfide (MoS2) transistors is studied. Device performance is significantly impacted by atmospheric adsorbates and temperature, affecting charge transport and noise levels.

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Area of Science:

Solid State Physics
Materials Science
Nanoscience

Background:

Low-frequency 1/f noise is a prevalent phenomenon in electronic devices, often limiting performance.
Transition metal dichalcogenides (TMDs), like MoS2, are promising materials for next-generation nanoscale electronics.
Understanding noise mechanisms is crucial for optimizing device functionality.

Purpose of the Study:

To quantitatively investigate low-frequency electronic noise in single-layer MoS2 field-effect transistors (FETs).
To determine the impact of environmental conditions (vacuum vs. ambient) and temperature on noise characteristics.
To elucidate the underlying physical mechanisms responsible for noise generation in MoS2 FETs.

Main Methods:

Fabrication and characterization of single-layer MoS2 FETs.
Low-frequency noise measurements were performed in vacuum and ambient conditions.
Noise measurements were conducted over a range of temperatures from 300 K down to 6.5 K.

Main Results:

The 1/f noise in vacuum was explained by mobility fluctuations, with the Hooge parameter ranging from 0.005 to 2.0.
In ambient conditions, field-effect mobility decreased and noise amplitude increased by an order of magnitude due to atmospheric adsorbates.
Generation-recombination noise increased by an order of magnitude upon cooling from 300 K to 6.5 K.

Conclusions:

Atmospheric adsorbates significantly degrade charge transport and increase noise in MoS2 FETs.
Temperature plays a critical role in generation-recombination noise in these devices.
Mobility fluctuations are the primary source of 1/f noise in MoS2 FETs under vacuum conditions.