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Measurement of an exciton Rabi rotation in a single GaN/Al(x)Ga(1-x)N nanowire-quantum dot using photoluminescence
1Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. holmes@iis.u-tokyo.ac.jp
Physical Review Letters
|August 20, 2013
Abstract:
Experimental observation of excited state exciton Rabi rotation in a single GaN quantum dot is presented. The dot is embedded in a site-controlled GaN/AlGaN nanowire. Damped oscillation is observed in the power-dependent spectra of the quantum-dot ground state upon resonant pumping of an excited state that had been identified by photoluminescence excitation spectroscopy. A discussion on the origins of the damping is given.

