Entropies of defect formation in ceria from first principles
Steffen Grieshammer1, Tobias Zacherle, Manfred Martin
1Institute of Physical Chemistry, RWTH Aachen University and JARA-HPC, Landoltweg 2, 52056 Aachen, Germany. sgrieshammer@pc.rwth-aachen.de.
Abstract:
We calculate entropies of formation for fully charged point defects, including the small polaron Ce'(Ce), in undoped fluorite-structured ceria by means of density functional theory in the GGA + U approximation. We discuss the behaviour of the entropy for the constant volume and the constant pressure case. Our results for constant pressure (p = 0) suggest that the change in volume, due to the formation of defects, dominates the entropy of formation. From the individual entropies of formation the entropies of Frenkel, anti-Frenkel and Schottky disorder as well as the entropy of reduction of ceria are obtained. At temperatures of about 1000 K the entropic contributions to the Gibbs energy are up to 0.9 eV per defect and thus are no longer negligible. For our calculated entropy of reduction of about 17 kB we find a remarkable agreement with experimental data from the literature.
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