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Updated: May 8, 2026

11:54
Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Origin of the self-limited electron densities at Al₂O₃/SrTiO₃ heterostructures grown by atomic layer deposition -
Sang Woon Lee1, Jaeyeong Heo, Roy G Gordon
1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA. gordon@chemistry.harvard.edu.
Nanoscale
|August 21, 2013
Abstract:
Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al₂O₃/SrTiO₃ (STO) heterostructures, in which the amorphous Al₂O₃ layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al₂O₃/STO heterostructures above the critical thickness of Al₂O₃ is explained by an oxygen diffusion mechanism.

