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Tuning electrical properties of graphite oxide by plasma
Hongfei Zhu1, Deyang Ji, Lang Jiang
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
Electrical properties of graphite oxide (GO) were tuned using plasma treatments. This research enables tunable semiconducting and highly conductive reduced graphite oxide (RGO) for advanced carbon electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- Graphite oxide (GO) is a precursor material with tunable electrical properties.
- Controlling the electronic behavior of reduced graphite oxide (RGO) is crucial for electronic applications.
Purpose of the Study:
- To investigate the effect of ammonia and hydrogen plasma treatments on the electrical properties of graphite oxide.
- To achieve tunable semiconducting and highly conductive reduced graphite oxide (RGO) sheets.
Main Methods:
- Treatment of graphite oxide (GO) samples with ammonia plasma for varying durations (10 to 4.5 min).
- Treatment of GO films with hydrogen:argon (9:1) plasma.
- Characterization of the electrical properties of the resulting reduced graphite oxide (RGO) sheets.
Main Results:
- Tuning of electrical properties (n-type, ambipolar, p-type semiconducting) of RGO by adjusting ammonia plasma time.
- Achieved high electron and hole mobilities of 5.41 and 2.10 cm² V⁻¹ s⁻¹ at low voltages.
- Obtained highly conductive RGO with conductivity around 630 S cm⁻¹ using hydrogen:argon plasma treatment.
Conclusions:
- Plasma treatment offers a versatile method for tuning the electrical properties of graphite oxide.
- The developed methods can produce RGO with diverse semiconducting behaviors and high conductivity.
- This work lays the foundation for developing novel carbon-based electronic devices.
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