A system for measuring complex dielectric properties of thin films at submillimeter wavelengths using an open...

Quasi-optical (QO) methods of dielectric spectroscopy are well established in the millimeter and submillimeter frequency bands. These methods exploit standing wave structure in the sample produced by a transmitted Gaussian beam to achieve accurate, low-noise measurement of the complex permittivity of the sample [e.g., J. A. Scales and M. Batzle, Appl. Phys. Lett. 88, 062906 (2006); R. N. Clarke and C. B. Rosenberg, J. Phys. E 15, 9 (1982); T. M. Hirovnen, P. Vainikainen, A. Lozowski, and A. V. Raisanen, IEEE Trans. Instrum. Meas. 45, 780 (1996)]. In effect the sample itself becomes a low-Q cavity. On the other hand, for optically thin samples (films of thickness much less than a wavelength) or extremely low loss samples (loss tangents below 10(-5)) the QO approach tends to break down due to loss of signal. In such a case it is useful to put the sample in a high-Q cavity and measure the perturbation of the cavity modes. Provided that the average mode frequency divided by the shift in mode frequency is less than the Q (quality factor) of the mode, then the perturbation should be resolvable. Cavity perturbation techniques are not new, but there are technological difficulties in working in the millimeter/submillimeter wave region. In this paper we will show applications of cavity perturbation to the dielectric characterization of semi-conductor thin films of the type used in the manufacture of photovoltaics in the 100 and 350 GHz range. We measured the complex optical constants of hot-wire chemical deposition grown 1-μm thick amorphous silicon (a-Si:H) film on borosilicate glass substrate. The real part of the refractive index and dielectric constant of the glass-substrate varies from frequency-independent to linearly frequency-dependent. We also see power-law behavior of the frequency-dependent optical conductivity from 316 GHz (9.48 cm(-1)) down to 104 GHz (3.12 cm(-1)).