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Sidewall crystalline orientation effect of post-treatments for a replacement metal gate bulk fin field effect
Jae Woo Lee1, Eddy Simoen, Anabela Veloso
1Imec , 3001 Leuven, Belgium.
Abstract:
The crystalline orientation effect is investigated for post-treatments of a replacement metal gate (RMG) p-type bulk fin field effect transistor (FinFET). After post-deposition annealing (PDA) and SF6 plasma treatment, the hole mobility is improved. From low-frequency noise analysis, reduction of the trap density and noise level is observed in PDA- and SF6-plasma-treated devices. (100) sidewall-oriented FinFETs show a lower noise level because of fewer interface traps compared to (110) sidewall-oriented devices. SF6 plasma affects the interface traps, whereas PDA relatively more affects bulk oxide traps for RMG high-k last FinFET.
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