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Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Diode: Forward bias

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...

Modeling of Diode Forward Characteristics

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

Modeling of Diode Reverse Characteristics

Modeling of Diode Reverse Characteristics

In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...

The Ideal Diode

The Ideal Diode

A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...

Diode: Reverse bias

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...

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Related Experiment Video

Updated: May 8, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Semiconductor diode characterization for total skin electron irradiation.

O A Madrid González¹, T Rivera Montalvo

¹Centro de investigación en Ciencia Aplicada y Tecnología Avanzada-Legaría del Instituto Politécnico Nacional, Legaría 694. Colonia Irrigación, 11500 México D.F.

Applied Radiation and Isotopes : Including Data, Instrumentation and Methods for Use in Agriculture, Industry and Medicine

|September 11, 2013

Summary

This study characterized a semiconductor diode using a 4 MeV electron beam for dosimetry. Results show its suitability for total skin electron therapy (TSET) treatment control.

Keywords:

Diode Electrons High rate Irradiation Mycosis Total body

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Diffuse Optical Spectroscopy for the Quantitative Assessment of Acute Ionizing Radiation Induced Skin Toxicity Using a Mouse Model

Diffuse Optical Spectroscopy for the Quantitative Assessment of Acute Ionizing Radiation Induced Skin Toxicity Using a Mouse Model

Published on: May 27, 2016

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Last Updated: May 8, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Diffuse Optical Spectroscopy for the Quantitative Assessment of Acute Ionizing Radiation Induced Skin Toxicity Using a Mouse Model

Diffuse Optical Spectroscopy for the Quantitative Assessment of Acute Ionizing Radiation Induced Skin Toxicity Using a Mouse Model

Published on: May 27, 2016

Area of Science:

Medical Physics
Radiation Oncology
Semiconductor Devices

Background:

Accurate dosimetry is crucial for effective radiation therapy.
Semiconductor diodes offer potential for real-time dose monitoring.
Total Skin Electron Therapy (TSET) requires precise dose delivery and control.

Purpose of the Study:

To characterize a semiconductor diode for radiation dosimetry.
To evaluate the diode's performance under electron beam irradiation.
To assess its suitability for in vivo dosimetry in TSET.

Main Methods:

Semiconductor diode characterization using a 4 MeV electron beam.
Diode calibration via irradiation within an ion chamber.
In vivo dosimetry measurements were performed.

Main Results:

The semiconductor diode exhibited consistent response to electron beam irradiation.
Calibration in an ion chamber provided a reliable dosimetric reference.
In vivo measurements confirmed the diode's potential for treatment monitoring.

Conclusions:

The characterized semiconductor diode is a viable option for dosimetry.
It demonstrates promise for real-time monitoring and control in TSET.
Further validation may confirm its role in clinical radiation oncology.