Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Multiferroic-Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same author

Observations from the RESET clinical trial: A post-hoc per protocol analysis of clinical outcomes with percutaneous 60-day medial branch PNS in chronic low back pain.

Interventional pain medicine·2026

Same author

History of SCS and patient-focused innovations: a manufacturer's perspective on the role of technology.

Pain medicine (Malden, Mass.)·2026

Same author

In Response to Comment on "Diagnostic Guidance for Chronic Complex Regional Pain Syndrome Type I and Type II from The American Society of Interventional Physicians (ASIPP)".

Pain physician·2026

Same author

Evaluation of Dithio Compounds Modified Porous Silicon for Label-Free Detection and Distinction of Biothiols.

ACS applied materials & interfaces·2026

Same author

Advancing conversational diagnostic AI with multimodal reasoning.

Nature medicine·2026

Same journal

Metal-Organic Framework Monoliths Derived from Emulsion-Templated Foams for Reactive Filtration.

ACS applied materials & interfaces·2026

Same journal

Binary to Quaternary Rare-Earth Phosphates: Compositional Effects on Thermal Properties and CMAS Corrosion Resistance of Environmental Barrier Coatings.

ACS applied materials & interfaces·2026

Same journal

Suture-Free Piezoelectric Band-Aid Membrane for Complex Peripheral Nerve Defects.

ACS applied materials & interfaces·2026

Same journal

Single-Precursor to Dual-Function: A Transformable Metal-Organic Framework Nanoplatform for Photocatalytic H<sub>2</sub> Evolution and CO<sub>2</sub> Reduction.

ACS applied materials & interfaces·2026

Same journal

Surfactant-Templated Synthesis of Mg-Stabilized High-Loading Co Single Atoms in Mesoporous Silica Featuring Robust Co-O Bonds for Efficient Peroxymonosulfate Activation.

ACS applied materials & interfaces·2026

Same journal

Toughening Driven by Interphase Tuning in Bioinspired Nanocomposites: From Structural Engineering to Scalable Fabrication.

ACS applied materials & interfaces·2026

See all related articles

Search research articles

Related Experiment Video

Updated: May 7, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VO_x

Published on: May 13, 2020

Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells.

Adnan Younis¹, Dewei Chu, Ionsecu Mihail

¹School of Materials Science and Engineering, University of New South Wales , Sydney, 2052 New South Wales, Australia.

ACS Applied Materials & Interfaces

|September 14, 2013

Summary

This summary is machine-generated.

Researchers developed a new cerium dioxide (CeO2) nanocube memory device with high performance. This novel resistive-switching memory shows excellent stability and a high ON/OFF ratio, paving the way for advanced electronics.

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Related Experiment Videos

Last Updated: May 7, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VO_x

Published on: May 13, 2020

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Area of Science:

Materials Science
Nanotechnology
Electrical Engineering

Background:

Resistive-switching random-access memory (RRAM) is a promising next-generation non-volatile memory technology.
Developing stable and efficient RRAM devices with high performance is crucial for future electronic applications.

Purpose of the Study:

To report a novel and facile approach for fabricating self-assembled cerium dioxide (CeO2) nanocube-based resistive-switching memory devices.
To investigate the resistive-switching characteristics, uniformity, stability, and the underlying mechanism of these CeO2 nanocube devices.

Main Methods:

Fabrication of self-assembled CeO2 nanocube-based thin films.
Characterization of the resistive-switching properties, including ON/OFF ratio, uniformity, and thermal stability.
Analysis of the role of oxygen vacancies in the switching mechanism.
Investigation of the effect of film thickness on carrier concentration and electric field strength.

Main Results:

The fabricated CeO2 nanocube devices exhibited excellent bipolar resistive-switching characteristics.
A high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10^4 was achieved.
The devices demonstrated good uniformity and stability up to 480 K.
Oxygen vacancies were identified as the key factor in the resistive-switching phenomenon.

Conclusions:

A facile method for fabricating high-performance CeO2 nanocube-based RRAM devices was successfully demonstrated.
The devices show significant potential for use in advanced memory applications due to their excellent electrical properties and stability.
Understanding the role of oxygen vacancies provides insights for further optimization of such memory devices.