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Related Concept Videos

Measurements of Strain01:27

Measurements of Strain

Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain gauge...
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X-ray Diffraction of Biological Samples

X-ray diffraction or XRD is an analytical tool that utilizes X-rays to study ordered structures such as crystalline organic and inorganic samples, polycrystalline materials, proteins, carbohydrates, and drugs.
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A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
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X-ray Crystallography02:18

X-ray Crystallography

The size of the unit cell and the arrangement of atoms in a crystal may be determined from measurements of the diffraction of X-rays by the crystal, termed X-ray crystallography.
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Assessing the precision of strain measurements using electron backscatter diffraction--part 2: experimental

T B Britton1, J Jiang, R Clough

  • 1Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.

Ultramicroscopy
|September 17, 2013
PubMed
Summary

High-resolution electron backscatter diffraction (EBSD) mapped residual strain and lattice rotation in silicon after microhardness indentation. Finite element analysis validated experimental results, showing good agreement in residual strain and crack size.

Keywords:
Cross correlationEBSDFinite element analysisIndentationSiliconStrain

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Area of Science:

  • Materials Science
  • Solid Mechanics
  • Crystallography

Background:

  • Microhardness indentation is a standard technique for material characterization.
  • Understanding residual stress and strain is crucial for material performance.
  • Electron Backscatter Diffraction (EBSD) provides high-resolution crystallographic information.

Purpose of the Study:

  • To map residual elastic strain and lattice rotation fields in silicon after microhardness indentation using high-resolution EBSD.
  • To investigate the impact of varying EBSD pattern binning and exposure times on data quality.
  • To compare experimental EBSD results with finite element analysis (FEA) predictions.

Main Methods:

  • High-resolution EBSD mapping of indented silicon.
  • Systematic variation of EBSD pattern binning and exposure times.
  • Finite element analysis using a calibrated continuum damage-plasticity model with cohesive elements.

Main Results:

  • EBSD successfully mapped residual strain and lattice rotation fields around indentations.
  • Qualitative assessment of strain fields is possible with up to 4x4 binning.
  • Quantitative analysis requires minimal binning and long exposure times for optimal smoothness.
  • FEA results closely matched experimental measurements of residual strain and crack size.

Conclusions:

  • High-resolution EBSD is effective for characterizing residual strain and lattice rotation in indented silicon.
  • Optimizing EBSD acquisition parameters is critical for quantitative analysis.
  • FEA provides a reliable method for simulating and understanding indentation-induced damage mechanisms in silicon.