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Three-wave X-ray diffraction in distorted epitaxial structures.

Reginald Kyutt1, Mikhail Scheglov

  • 1Ioffe Physical Technical Institute, Russian Academy of Sciences, St Petersburg, Russian Federation.

Journal of Applied Crystallography
|September 19, 2013
PubMed
Summary

Three-wave diffraction analysis reveals structural perfection in GaN, AlN, AlGaN, and ZnO epitaxial layers. Peak analysis using Renninger scans provides insights into crystal distortion and dislocation structures.

Keywords:
X-ray diffractionepitaxial layersmultiple diffractionstructural defectswurtzite structure

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Crystallography

Background:

  • Epitaxial layers of GaN, AlN, AlGaN, and ZnO on c-sapphire are crucial for electronic and optoelectronic devices.
  • Understanding their structural perfection is vital for device performance and reliability.
  • Multiple-beam diffraction offers a sensitive probe for crystal lattice analysis.

Purpose of the Study:

  • To investigate three-wave diffraction in GaN, AlN, AlGaN, and ZnO epitaxial layers.
  • To analyze the influence of structural perfection and dislocation types on diffraction peak characteristics.
  • To explore the application of Renninger scans for characterizing distorted crystalline layers.

Main Methods:

  • Three-wave diffraction measurements were performed on GaN, AlN, AlGaN, and ZnO epitaxial layers grown on c-sapphire.
  • Renninger scans utilizing the primary forbidden 0001 reflection were employed.
  • Analysis included both phi- and theta-scan curves, focusing on peak intensity and angular width (FWHM).

Main Results:

  • The full width at half maximum (FWHM) of theta scans proved highly sensitive to structural perfection and varied with the three-wave combination.
  • Narrowest peaks were observed for combinations with higher 'l' indices of the secondary hkl reflection.
  • The type of dislocation structure significantly influenced theta-scan broadening.
  • AlGaN layers exhibited a nonzero 0001 reflection, unlike AlN and GaN films.

Conclusions:

  • Three-wave diffraction, particularly Renninger scans, effectively probes structural perfection and distortions in epitaxial layers.
  • The observed peak broadening is linked to reciprocal space geometry and disc-shaped reciprocal lattice points.
  • Dislocation structures play a key role in modifying diffraction patterns.
  • The distinct 0001 reflection in AlGaN suggests unique structural or compositional properties compared to AlN and GaN.