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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
A theoretical model for metal-graphene contact resistance using a DFT-NEGF method
Xiang Ji1, Jinyu Zhang, Yan Wang
1Institute of Microelectronics, Tsinghua University, Beijing, China 100084. wangy46@tsinghua.edu.cn.
This study introduces a new theoretical model for graphene contact resistance (R(c)), accounting for Fermi velocity differences. The model accurately predicts R(c) values, crucial for high-performance graphene electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Contact resistance (R(c)) is critical for graphene device performance.
- Existing models fail to account for Fermi velocity differences at metal-graphene interfaces.
Purpose of the Study:
- To develop a theoretical model for estimating R(c) in graphene-metal contacts.
- To incorporate the Fermi velocity mismatch between contacted and uncontacted graphene.
Main Methods:
- Density-functional theory (DFT) calculations.
- Non-equilibrium Green's function (NEGF) methods.
- Theoretical modeling of metal-graphene interfaces.
Main Results:
- A novel theoretical model for R(c) was developed.
- The model provides a clear physical understanding of contact mechanisms.
- Predicted R(c) values align well with experimental data (e.g., 210 Ω μm for double-sided Pd contacts).
Conclusions:
- The new model accurately predicts graphene contact resistance.
- This work advances the understanding and design of graphene-based electronic devices.
- Accurate R(c) estimation is vital for optimizing graphene device performance.
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