A theoretical model for metal-graphene contact resistance using a DFT-NEGF method

Xiang Ji1, Jinyu Zhang, Yan Wang

  • 1Institute of Microelectronics, Tsinghua University, Beijing, China 100084. wangy46@tsinghua.edu.cn.

Summary

This study introduces a new theoretical model for graphene contact resistance (R(c)), accounting for Fermi velocity differences. The model accurately predicts R(c) values, crucial for high-performance graphene electronics.

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