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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Anodic bonded 2D semiconductors: from synthesis to device fabrication
Zhesheng Chen1, Karim Gacem, Mohamed Boukhicha
1Institut de Minéralogie et de Physique des Milieux Condensés, CNRS-UMR7590,Université Pierre et Marie Curie, Paris, F-75252, France. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000,People's Republic of China.
Nanotechnology
|September 25, 2013
Summary
Large-area two-dimensional semiconductors like gallium sulfide (GaS), gallium selenide (GaSe), and indium selenide (InSe) were fabricated. These materials show promise for novel electronic devices and hybrid heterostructures with graphene.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) semiconductors are crucial for advanced electronic applications.
- Hybrid heterostructures, particularly those involving graphene, are of significant interest.
- Gallium sulfide (GaS), gallium selenide (GaSe), and indium selenide (InSe) are III-VI semiconductors with potential for 2D applications.
Purpose of the Study:
- To fabricate large-area few-layer samples of GaS, GaSe, and InSe.
- To characterize these 2D semiconductor materials.
- To demonstrate the feasibility of using these materials in electronic devices.
Main Methods:
- Anodic bonding method for sample fabrication.
- Optical microscopy for structural analysis.
- Atomic force microscopy (AFM) for surface topography.
- Raman spectroscopy for material characterization.
Main Results:
- Successful fabrication of few-layer, large-area (tens of microns) GaS, GaSe, and InSe samples.
- Comprehensive characterization using optical microscopy, AFM, and Raman spectroscopy.
- Construction of two-terminal gated devices demonstrating material functionality.
Conclusions:
- The anodic bonding method is effective for producing large-area 2D III-VI semiconductors.
- GaS, GaSe, and InSe are viable candidates for future electronic devices.
- These materials hold potential for integration into novel hybrid heterostructures.
