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Updated: May 7, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

S Parui1, P S Klandermans, S Venkatesan

  • 1Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|September 27, 2013
PubMed

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