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Related Experiment Video

Updated: May 7, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

Quantum resistance metrology using graphene.

T J B M Janssen1, A Tzalenchuk, S Lara-Avila

  • 1National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.

Reports on Progress in Physics. Physical Society (Great Britain)
|October 4, 2013
PubMed
Summary
This summary is machine-generated.

Graphene is advancing quantum resistance standards, showing high precision in Hall resistance comparisons. Epitaxial graphene on silicon carbide (SiC) leads in metrology applications.

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Area of Science:

  • Solid State Physics
  • Materials Science
  • Quantum Metrology

Background:

  • Graphene exhibits unique electronic properties relevant for resistance metrology.
  • Traditional resistance standards often rely on materials like Gallium Arsenide (GaAs).

Purpose of the Study:

  • To review advancements in graphene-based quantum standards for resistance.
  • To compare the performance of different graphene material systems in metrology.

Main Methods:

  • Review of recent research on graphene for resistance standards.
  • Direct comparison of Hall resistance measurements between graphene and GaAs.
  • Analysis of epitaxial graphene on SiC, exfoliated graphene, and chemical vapor deposition (CVD) graphene.

Main Results:

  • Graphene shows extraordinary progress as a quantum standard for resistance.
  • Highest-ever precision direct comparison of Hall resistance achieved using graphene.
  • Epitaxial graphene on SiC demonstrates superior performance compared to other graphene types.

Conclusions:

  • Graphene, particularly epitaxial graphene on SiC, is a promising material for next-generation quantum resistance standards.
  • Graphene offers potential for broader applications in metrology beyond resistance standards.