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Related Experiment Video

Updated: May 7, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Structural investigation of GaInP nanowires using X-ray diffraction.

D Kriegner¹, J M Persson, T Etzelstorfer

¹Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria.

Thin Solid Films

|October 4, 2013

Summary

This summary is machine-generated.

Investigating gallium indium phosphide (GaInP) nanowires reveals significant 20% variations in chemical composition. These findings highlight challenges in achieving uniform material properties for advanced electronic applications.

Keywords:

III–V semiconductors Nanowires X-ray diffraction

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Last Updated: May 7, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices

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Published on: November 15, 2013

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Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Ternary III-V semiconductor nanowires like GaInP are crucial for advanced electronic and optoelectronic devices.
Achieving precise control over chemical composition and homogeneity in nanowire growth is essential for device performance.

Purpose of the Study:

To investigate the structural properties, chemical composition, and homogeneity of ternary gallium indium phosphide (GaInP) nanowires.
To understand the extent of compositional variations within samples and individual nanowires.

Main Methods:

Growth of GaInP nanowires using metal-organic vapor-phase epitaxy (MOVPE).
Analysis of X-ray diffraction (XRD) reciprocal space maps to study ensemble fluctuations.
Utilizing synchrotron X-ray sources with micro-beam capabilities to probe compositional gradients.
X-ray energy dispersive spectroscopy (XEDS) for compositional analysis within single nanowires.

Main Results:

XRD analysis revealed complex and varying material composition across the sample, with fluctuations up to 20%.
Synchrotron XRD measurements demonstrated compositional gradients along the sample length.
XEDS confirmed significant compositional variations within individual GaInP nanowires.

Conclusions:

The study highlights considerable challenges in achieving uniform chemical composition in MOVPE-grown GaInP nanowires.
Significant compositional inhomogeneity exists both across the sample and within individual nanowires.
These findings are critical for optimizing growth parameters and understanding limitations in GaInP nanowire-based technologies.