Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...

Imperfections in Crystal Structure: Point, Line and Plane Defects

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Expanded Heisenberg Hamiltonians from a Mn/Bi DFT+U study on hexagonal antiferromagnet CaMn<sub>2</sub>Bi<sub>2</sub>: excitations and strain-controlled magnetic anisotropy switching.

Scientific reports·2026

Same author

Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene.

Scientific reports·2025

Same author

Tuning the conductance of carbon rings with impurities and electric fields.

RSC advances·2023

Same author

Magnetic order and magnetic anisotropy in two-dimensional ilmenenes.

Nanoscale advances·2023

Same author

Correction: Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping.

Nanoscale·2023

Same author

Rhombohedral trilayer graphene is more stable than its Bernal counterpart.

Nanoscale·2022

Search research articles

Related Experiment Video

Updated: May 7, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Octagonal defects at carbon nanotube junctions.

W Jaskólski¹, M Pelc, Leonor Chico

¹Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland.

Thescientificworldjournal

|October 4, 2013

Summary

This summary is machine-generated.

We studied knee-shaped junctions in semiconductor carbon nanotubes. Localized electronic states at these junctions are linked to octagonal defects and can lead to antiferromagnetic behavior when Coulomb interactions are considered.

More Related Videos

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

Published on: February 5, 2017

Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays

Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays

Published on: April 15, 2013

Related Experiment Videos

Last Updated: May 7, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

Published on: February 5, 2017

Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays

Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays

Published on: April 15, 2013

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Semiconductor carbon nanotubes exhibit unique electronic properties.
Junctions in these nanotubes can significantly alter their behavior.

Purpose of the Study:

Investigate the electronic properties of knee-shaped junctions in semiconductor zigzag carbon nanotubes.
Understand the role of structural defects in localized electronic states.

Main Methods:

Theoretical investigation of knee-shaped junctions.
Analysis of electronic structure at Fermi energy (E(F)).
Inclusion of Coulomb interaction effects.

Main Results:

Knee-shaped junctions with two octagons show two degenerate localized states at E(F).
Reconstruction of one octagon into two pentagons reduces localized states to one near E(F).
Coulomb interactions split the localized states, inducing an antiferromagnetic system.

Conclusions:

Localized electronic states in these junctions are directly related to octagonal defects.
Structural reconstruction and Coulomb interactions are critical in determining the electronic and magnetic properties of carbon nanotube junctions.