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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Nicolas Bernier1, Elke Leunis, Carlos Furtado
1OCAS N.V., ArcelorMittal Global R&D Gent, 9060 Zelzate, Belgium.
This study introduces a new Electron Backscatter Diffraction (EBSD) method to precisely measure grain orientation deviations (α and β angles) in grain-oriented (GO) electrical steels. This technique enhances the understanding of texture-property relationships for improved magnetic performance.
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