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Updated: May 7, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Two-step reset in the resistance switching of the Al/TiOx/Cu structure
Xing L Shao1, Jin S Zhao, Kai L Zhang
1School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.
Abstract:
Two-step reset behaviors in the resistance switching properties of the top Al/TiOx/bottom Cu structure were studied. During the electroforming and set steps, two types of conducting filaments composed of Cu and oxygen vacancies (Cu-CF and V(O)-CF) were simultaneously (or sequentially) formed when Al was negatively biased. In the subsequent reset step with the opposite bias polarity, the Cu-CFs ruptured first at ~0.5 V, and formed an intermediate state. The trap-filled V(O)-CFs were transformed into a trap-empty state, resulting in a high-resistance state at ~1 V. Matrix phase in the electrochemical metallization cell can play an active role in resistance switching.
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